data book 1 03.00 gaas mmic cgy 93p data sheet ? power amplifier for gsm application ? 2 stage amplifier ? overall power added efficiency 55% esd: e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code (taped) package cgy 93p cgy 93p q62702-g72 mw-16 maximum ratings symbol value unit positive supply voltage v d 7.0 v negative supply voltage v g C 5.0 v supply current stage 1 i d1 0.6 a supply current stage 2 i d2 3.5 a channel temperature t ch 150 c storage temperature t stg C 55 + 150 c rf input power p in 20 dbm total power dissipation (cw, t c 83 c) t c : temperature at soldering point p tot 7.5 w pulse peak power dissipation duty cycle 12.5%, t on = 0.577 ms p puls 17 w thermal resistance symbol value unit junction-case r thjch 9.0 k/w mw-16
cgy 93p data book 2 03.00 figure 1 functional block diagram pin out pin # name configuration 1nc C 2 vg2 gate voltage stage 2 3ncC 4 vd1 drain voltage stage 1 5ncC 6ncC 7 rfin rf input 8 vg1 gate voltage stage 1 9ncC 10 nc C 11 nc C 12,13,14,15 vd2/rfout drain voltage stage 2/rf output 16 nc C (17) gnd ground (backside of mw-16 housing) eht08867 82 417 7 12, 13, 14, 15 cgy 93p g1 v g2 v d1 v backside rf in rf out / v d2 gnd
cgy 93p data book 3 03.00 electrical characteristics t a = 25 c, pulsed with a duty cycle of 12.5%, t on = 577 m s. parameters symbol limit values unit test conditions min. typ. max. frequency range f 880 C915mhzC supply current with rf i drf C1.8Ca p in = 12 dbm, v d = 3.5 v small signal gain g 29 30.0 C db v d = 3.5 v, p in = C 10 dbm power gain g p 23 23.3 C db v d = 3.5 v, p in = 12 dbm output power p out 33.0 33.3 C dbm v d = 2.8 v, p in = 12 dbm output power p out 35.0 35.3 C dbm v d = 3.5 v, p in = 12 dbm overall power added efficiency h 47 53 C % v d = 2.8 v, p in = 12 dbm overall power added efficiency h 50 55 C % v d = 3.5 v, p in = 12 dbm noise power in rx (935 - 960 mhz) n rx CC 82Cdbm p in = 12 dbm, p out = 33.3 dbm, 100 khz rbw harmonics h (2 f 0 ) h (3 f 0) ) 40 40 43 43 C C dbc dbc v d = 2.8 v, p in = 12 dbm, p out = 33.3 dbm stability all spurious outputs < C 60 dbc, vswr load, all phase angles C C 10 : 1 C C C input vswr (with external match) C C 2 : 1 2.2 : 1 C C
data book 4 03.00 cgy 93p cgy 93p, @ 2.8 v, f = 900 mhz v g = C 2.0 v, pulsed with a duty cycle of 12.5%, t on = 0.577 ms cgy 93p C p out and pae vs. v d output matching optimized for v d = 3.5 v, f = 900 mhz, duty cycle of 12.5%, t on = 0.577 ms, p in = 12 dbm -5 eht08868 20 out p in p 0 pae out p pae 22 24 26 28 30 32 34 36 dbm 10 20 30 40 50 60 70 80 % -3 -1 1 3 5 7 9 11 dbm 15 21 25 23 27 29 31 33 5 25 15 35 45 55 65 2 eht08870 30 out p d v 16 pae out p pae 31 20 32 24 33 28 34 32 35 36 36 40 37 44 38 48 39 52 40 56 dbm % 42 64 2.5 3 3.5 4 4.5 v 5.5 cgy 93p, @ 2.8 v, f = 900 mhz v g = C 2.0 v, pulsed with a duty cycle of 12.5%, t on = 0.577 ms -5 eht08869 20 out p in p 0 pae out p pae 22 24 26 28 30 32 34 36 dbm 10 20 30 40 50 60 70 80 % -3 -1 1 3 5 7 9 11 dbm 15 21 5 23 15 25 25 27 35 29 31 45 55 65 33
cgy 93p data book 5 03.00 gsm application board cgy 93p figure 2 figure 3 eht08871 cgy 93p g1 v g2 v d1 v rf in v d2 10 pf 2.7 pf 47 nf 5.6 pf 1 nf v d1 rf out v g1 v g2 v d2 10 nh test board cgy 93p 50 w transmission line rf in rf out / gnd v g1 eht08872 cgy 93p 1 nf cgy 93p in 5.6 pf v d1 1 nf g2 vv d2 33 nh 10 pf 2.7 pf 47 nf gnd amplifier gsm power out 1 nf
cgy 93p data book 6 03.00 determination of permissible total power dissipation for continuous and pulse operation the purpose of the following procedure is to prevent the junction temperature t j from exceeding the maximum allowed data sheet value. t j is determined by the dissipated power and the thermal properties of the device and board. the dissipated power is the power which remains in the chip and heats the device and junction. it does not contain rf signals which are coupled out consistently. this is a two step approach: for a pulsed condition both steps are needed. for cw and dc step one is sufficient. step 1: continuous wave/dc operation for the determination of the permissible total power dissipation p tot-dc from the diagram below it is necessary to obtain the temperature of the case t c first. because the mw-16 heat sink is not easily accessible to a temperature measurement the thermal resistance is defined as r thjc using the case temperature t c. there are two cases: ? when r thca (case to ambient) is not known: measure t c in operation of device and board at the upper side of the case where the temperature is highest. small thermoelements (< 1 mm, thin wires, thermopaste) or thermopapers with low heat dissipation are well suited. figure 4 measurement of case temperature t c pcb ambient (a) eht08701 thermoelement for case (c) junction (j) soldered heatsink case t
cgy 93p data book 7 03.00 ? when r thca is already known: calculate the case temperature as t c = p diss r thca + t a graph for p tot-dc p tot-dc in mw step 2: pulsed operation for the calculation of the permissible pulse load p tot-max the following formula is applicable: p tot-max = p tot-dc pulse factor = p tot-dc ( p tot-max / p tot-dc ) use the values for p tot-dc as derived from the above diagram and for the pulse factor = p tot-max / p tot-dc from the following diagram to get a specific value. 0 0 eht08865 tot dc p c t 20 40 60 80 100 120 ?c 160 1000 2000 3000 4000 5000 6000 7000 8000 mw 10000
cgy 93p data book 8 03.00 pulse factor p tot-max / p tot-dc = f (t_p) p tot-max should not exceed the absolute maximum rating for the dissipated power p pulse = pulse peak power = 17 w reliability considerations the above procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which correspond to the maximum allowed junction temperature. for best reliability keep the junction temperature low. the following formula allows to track the individual contributions which determine the junction temperature. t j =( p tot-diss /pulse factor r thjc ) + t c junction temperature (= channel temperature) power dissipated in the chip, divided by the applicable pulse factor (= 1 for dc and cw). it does not contain decoupled rf-power r th of device from junction to case temperature of the case, measured or calculated, device and board operating eht08875 p t p tot dc 10 -6 0 10 t t t d = p p t p tot max 0.005 0.01 0.02 0.05 0.1 0.2 0.5 d = -5 10 -4 10 -3 10 -2 10 -1 10 s 1 10 5
cgy 93p data book 9 03.00 package outlines gpw05969 7 1.6 max 0.1 1.4 0.35 0.05 0.8 exposed solderable heatsink ?4.57 0.05 9 1) 7 1) 5.6 7 x 0.8 = b d a 0.2 m c 0.1 max 0.15 -0.06 0?...7? +0.05 2) d a-b a-b 0.2 h d 4x 16x 0.2 d 16x 0.1 c c c mw-16 (special package) sorts of packing package outlines for tubes, trays etc. are contained in our data book package information. dimensions in mm smd = surface mounted device
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